Publications & Presentations

*: supervissed M-PAC lab students
 
2020:
 
  • J. Saltin*, N. C. Dao, P. H. W. Leong, and H. Y. Wong, "Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs," Accepted to IEEE Journal of Electron Devices Society (J-EDS).
  • Hiu Yung Wong and Armand Tenkeu*, “Advanced TCAD Simulation and Calibration of Gallium Oxide Vertical Transistor,” ECS Journal of Solid State Science and Technology 9 (3), 035003, 2020.
  • Hiu-Yung Wong, Denis Dolgos, Lee Smith, Rimvydas V. Mickevicius, “Modified Hurkx Band-to-Band-Tunneling Model for Accurate and Robust TCAD Simulations,” Microelectronics Reliability, Volume 104, January 2020, 113552.
  • Hoang Cao*, Thanh Lam*, Hoi Nguyen*, AyyaswamyVenkattraman, David Parent, and Hiu Yung Wong, " Study of ReRAM Neuromorphic Circuit Inference Accuracy Robustness using DTCO Simulation Framework," Accepted to IEEE Workshop on Microelectronics and Electron Devices, 2020.
  • Hiu Yung Wong, Modeling, Calibration and Simulation of Ga2O3 Vertical Diode and FinFET in TCAD, Workshop on Compound Semiconductor Materials and Devices WOCSEMMAD, 2020.
  • Hiu Yung Wong, Nelson Braga, and R. V. Mickevicius, TCAD modeling of hydrogen-terminated diamond FET for RF Applications, Mat Science 2020, San Francisco, CA, April 27-29, 2020.
  • Atsushi Shimbori, Hiu Yung Wong and Alex Q. Huang, "Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode," Accepted to 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
  • Robert J Mears, Hideki Takeuchi, Yi-Ann Chen, Richard Burton, Shuyi Li, Robert J. Stephenson, Marek Hytha, Nyles W. Cody, K. Doran Weeks, Dmitri Choutov, Daniel Connelly and Hiu-Yung Wong, “Applications of Oxygen Inserted Silicon Devices in Power and RF,” 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2020. (INVITED)

2019:

  • Boyan Wang, Ming Xiao, Xiaodong Yan, Hiu Yung Wong, Jiahui Ma, Kohei Sasaki, Han Wang, and Yuhao Zhang, “High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K”, Appl. Phys. Lett. 115, 263503 (2019); https://doi.org/10.1063/1.5132818.
  • Hiu Yung Wong , Johan Saltin* and Yan Ka Chiu*, “SRAM Radiation Effect Study using DTCO Approach,” 16th International Conference on Reliability and Stress-related Phenomena in Nano and Microelectronics, San Jose, USA, Nov, 2019. (INVITED)
  • Johan Saltin* and Hiu Yung Wong, “TCAD Simulation of FinFET and Nanosheet Radiation Hardness,” 16th International Conference on Reliability and Stress-related Phenomena in Nano and Microelectronics, San Jose, USA, Nov, 2019. (Poster)
  • Johan Saltin*, Shiyang Tian, Fei Ding and Hiu Yung Wong, "Novel Doping Engineering Techniques for Gallium Oxide MOSFET to Achieve High Drive Current and Breakdown Voltage," accepted to IEEE 7th Workshop on Wide Bandgap Power Devices and
    Applications, 2019.
  • Khoa Huynh*, Johan Saltin*, Jin-Woo Han, Meyya Meyyappan and Hiu Yung Wong, "Study of Layout Dependent Radiation Hardness of FinFET SRAM using Full Domain 3D TCAD Simulation," accepted to IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2019.
  • J. Saltin*, N. C. Dao, P. H. W. Leong, and H. Y. Wong, "Degradation of Sub-Threshold Slope in Ultra-Scaled MOSFETs due to Energy Filtering at Source Contact," accepted to IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2019.
  • K. Huynh*, A. C. Tenkeu*, K.P. Pun and H. Y. Wong, "TCAD-Spice Co-Simulation of Ferroelectric Capacitor as an Electrically Trimmable On-Chip Capacitor in Analog Circuit", accepted to IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2019.
  • Bankapalli Yogeswara Sarat* and Wong Hiu Yung, “TCAD Augmented Machine Learning for Semiconductor Device Failure Troubleshooting and Reverse Engineering”, accepted to IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices.
  • Ravi Tiwari, Narendra Prihar, Karansingh Thakor, Hiu-Yung Wong and Souvik Mahapatra, "TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain",accepted to IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices.
  • Hiu Yung Wong, Nelson Braga, Jie Liu and R. V. Mickevicius, "Studies of Stress Effects on the Electrical Performance of AlGaN/GaN HEMTs through Ab-Initio Calculation and TCAD Simulation," accepted to 13th International Conference on Nitride Semiconductors 2019 (ICNS-13).
  • Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Munkang Choi, Victor Moroz and Souvik Mahapatra, "A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact," in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2086-2092, May 2019.
  • Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Munkang Choi, Victor Moroz and Souvik Mahapatra, "A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling," in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2093-2099, May 2019.
  • Hiu Yung Wong and Johan Saltin*, TCAD Simulation of Novel Gallium Oxide Power Device with High On/Off Ratio, Workshop on Compound Semiconductor Materials and Devices WOCSEMMAD, 2019, (INVITED)
 
2018: 
 
  • H. Y. Wong, F. Ding, N. Braga, R. V. Mickevicius, “Normally-off Dual-gate Ga2O3 Planar MOSFET and FinFET with High Current and Breakdown Voltage,” International Symposium on Power Semiconductor Devices and ICs 2018.
  • Hiu Yung Wong, Munkang Choi, Ravi Tiwari and Souvik Mahapatra, “On the NBTI of Junction-less Nanowire and Novel Operation Scheme to Minimize NBTI Degradation in Analog Circuits”, to appear in SISPAD 2018.
  • Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “Enhancement Mode Recessed Gate and Cascode Gate Junctionless Nanowire with Low Leakage and High Drive Current,” to appear in IEEE Transactions on Electron Devices.
  • N. Parihar, R. Tiwari, C. Ndiaye, M. Arabi, S. Mhira, H. Wong, S. Motzny, V. Moroz, V. Huard and S. Mahapatra, "Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in RMG HKMG SiGe FDSOI p-MOSFETs and p-FinFETs", to appear in SISPAD 2018
  • P. Pfäfflia, H.Y. Wong, X. Xu, L. Silvestria, X.W. Lin, T. Yang, R. Tiwari, S. Mahapatra, S. Motzny, V. Moroz and Terry Ma, “TCAD Modeling for Reliability,” to appear in 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (INVITED)
  • Pooya Jannaty, Hiu-Yung Wong, Ricardo Borges, Lee Smith, “A physics-based industry-proven TCAD simulator for superconducting electronics,” to appear in Applied Superconductivity Conference 2018. (POSTER)
  • N. Braga, H.Y. Wong and V. Mickevius, Rake-Gate AlGaN/GaN normally off HEMTs, Workshop on Compound Semiconductor Materials and Devices WOCSEMMAD, 2018, (INVITED)

2017:

  • Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation,” Diamond and Related Materials, Volume 80, November 2017, Pages 14-17.
  • Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “A Physical Model of the Abnormal Behaviour of Hydrogen-Terminated Diamond MESFET,” 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, 2017, pp. 333-336.
  • Hiu Yung Wong, Subrat Mishra, Souvik Mahapatra, Steve Motzny and Victor Moroz, “FinFET NBTI Degradation Reduction and Recovery Enhancement through Hydrogen Incorporation and Self-Heating”, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, 2017, pp. 101-104.
  • S. Mishra, H. Y. Wong, R. Tiwari1, N. Parihar1, R. Rao, S. Motzny, V. Moroz and S. Mahapatra, “Predictive TCAD for NBTI Stress-Recovery in Various Device Architectures and Channel Materials”, 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, 2017, pp. 6A-3.1-6A-3.8.
  • “Selected TCAD Topics on More Moore and More than Moore”, Seminar Talk in Department of Electronic Engineering, Chinese University of Hong Kong, Hong Kong, 2017.

2016:

  • Hiu Yung Wong, Nelson Braga, R. V. Mickevicius, "Normally-off GaN HFET based on Layout and Stress Engineering ", IEEE Electron Device Letters, 37 (12), 1621-1624.
  • Hiu Yung Wong, Nelson Braga, R. V. Mickevicius, “AlGaN/GaN Rake-Gate HFET: A Novel Normally-Off HFET based on Stress and Layout Engineering”, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, pp. 61-64.
  • Hiu Yung Wong, Oleg Penzin, Nelson Braga, R. V. Mickevicius, “Quantum Correction in AlGaN/GaN Transistor Simulations Using Modified Local Density Approximation (MLDA),” 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 2016, pp. 239-242.
  • Subrat Mishra, Hiu Yung Wong, Ravi Tiwari, Ankush Chaudhary, Rakesh Rao, Victor Moroz and Souvik Mahapatra, “TCAD-based NBTI Predictive Model for Sub-20nm node Device Design Considerations”, IEEE Transactions on Electron Devices, 63 (12), 4624-4631.
  • Jin-Woo Han, Hiu-Yung Wong, Nelson Braga, Dong-Il, Moon and Meyya Meyyappan, “Stringer Gate FinFET on Bulk Substrate”, IEEE Transactions on Electron Devices, 63 (9), 3432-3438.
  • Victor Moroz, Hiu Yung Wong, Munkang Choi, Nelson Braga, R. V. Mickevicius, Yuhao Zhang, Thomas Palacios, “The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits”, ECS J. Solid State Sci. Technol. 2016, volume 5, issue 4, P3142-P3148. (INVITED PAPER)
  • Victor Moroz, Hiu Yung Wong, and Munkang Choi, “Modeling Extended Defects in Semiconductor Devices, “ECS PRiME 2016. ECS Transactions 75 (4), 143-152 (INVITED PAPER)

 

2015:

  • Hiu Yung Wong, Nelson Braga, R. V. Mickevicius and Jie Liu, "Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation," Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on, Blacksburg, VA, 2015, pp. 24-27.
  • Y. Zhang*, H.-Y. Wong*, M. Sun, S. Joglekar, N. A., R. V. Mickevicius, and T. Palacios, "Design space and origin of off-state leakage in GaN vertical power diodes," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 2015, pp. 35.1.1-35.1.4.   (*Equal contribution)
  • Yuhao Zhang, Min Sun, Hiu-Yung Wong, Yuxuan Lin, Puneet Srivastava, Christopher Hatem, Mohamed Azize, Daniel Piedra, Lili Yu, Takamichi Sumitomo, Nelson de Almeida Braga, Vidas Mickevicius, and Tomás Palacios, "Origin and Control of Off-State Leakage Current in GaN-on-Si Vertical Diodes ", IEEE Transactions on Electron Devices, Vol. 62, No.7, 2155-2161, 2015.
  • M. Shur, M. Gaevski, R. Gaska, G. Simin, H. Y. Wong, N. Braga, and R. Mickevicius, “Power Loss Reduction in Perforated-Channel HFET Switches”, ECS Trans. 2015 66(1): 179-183. (INVITED PAPER)

 

2014:

  • H. Y. Wong, N. Braga, R. V. Mickevicius, F. Gao and T. Palacios, "Study of AlGaN/GaN HEMT degradation through TCAD simulations," Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on, Yokohama, 2014, pp. 97-100.
  • R Gaska, M Gaevski, J Deng, H Wong, N Braga, RV Mickevicius, M Shur, III-Nitride Perforated Channel FET for High-Efficiency Power Switches and Amplifiers, International Workshop on Nitride Semiconductor 2014
  • M. Shur, M. Gaevski, J. Deng, R. Gaska, H. Wong, N. Braga, V. Mickevicius, and G. Simin, Superior Frequency Characteristics of Perforated Channel HFET, The Lester Eastman Conference on High Performance Devices, 5 – 7 Aug. 2014, Cornell Univ. p. S4-P4

 

Before 2013:

  • R Gaska, J Yang, D Billingsley, B Khan, G Simin, HY Wong, N Braga, X Hu, J Deng, M Shur, R Mickevicius, “Insulated-Gate Integrated III-Nitride RF Switches”, Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE.
  • H Wong, N Braga, S Tian, R Borges, “Simulations Enhance The Development Of Power Devices”, compound semiconductor, 2011
  • Hiu Yung Wong, H. Takeuchi, T-J King, M. Ameen, and A. Agarwal, "Elimination of Poly-Si Gate Depletion for Sub-65nm CMOS Technologies by Excimer Laser Annealing", IEEE Electron Device Letters, Vol. 26, No. 4, pp. 234-236, 2005.
  • Hiu Yung Wong, “Elimination of Poly-Si Gate Depletion for Sub-65nm CMOS Technologies by Excimer Laser Annealing”, West Coast Junction Technology Group Meeting, Sunnyvale, CA, 2005. (INVITED TALK)
  • Hiu Yung Wong, Laser Annealing Technology, AMD, Sunnyvale, CA, 2005. (INVITED TALK)
  • H. Y. Wong, H. Takeuchi, A. Padilla, T.-J. King, M. Ameen, and A. Agarwal, "Pulsed excimer laser annealing for meeting near-term front end processes gate-stack challenges," presented at the 207th Meeting of the Electrochemical Society, Symposium K1 (Quebec City, Canada), May 2005.
  • H.-Y. Wong, H. Takeuchi, T.-J. King, M. Ameen, and A. Agarwal, "Reduced poly-Si gate depletion effect by pulsed excimer laser annealing," presented at the 205th ECS Meeting, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II Symposium (San Antonio, TX, USA), May 2004. (INVITED PAPER)
  • H. Takeuchi, H. Y. Wong, D. Ha, and T.-J. King, "Impact of oxygen vacancies on high-k gate dielectric engineering," International Electron Devices Meeting Technical Digest, pp. 829-832, 2004.
  • Neil N. H. Ching, H. Y. Wong, Wen J. Li, Philip H. W. Leong and Zhiyu Wen, "A laser-micromachined multi-modal resonating power transducer for wireless sensing systems'', Sensors and Actuators A: Physical, Vol. 97-98, pp. 685-690, 2002.
  • H. Y. Wong, K. Shin, and M. Chan, "The Gate Misalignment Effects of the Sub-threshold Characteristics of sub-100nm DG-MOSFETs", 2002 IEEE Hong Kong Electron Devices Meeting Proceedings, pp. 91-94, June 22, 2002, Hong Kong
  • P. H. W. Leong, C. W. Sham, W. C. Wong, H. Y. Wong, W. S. Yuen and M. P. Leong, "A Bitstream Reconfigurable FPGA Implementation of the WSAT algorithm'', IEEE Transactions on VLSI Systems, Vol. 9, No. 1, pp. 197-201, 2001
  • Neil N. H. Ching, Hiu Yung Wong, Wen J. Li, and Philip H. W. Leong, "A laser-micromachined vibrational to electrical power transducer for wireless sensing systems", 11th International Conference on Solid-State Sensors and Actuators, (Transducers '01 / Eurosensors XV), Munich, Germany, June 2001.
  • W. J. Li, G. M. H. Chan, N. N. H. Ching, P. H. W. Leong and H. Y. Wong, "Dynamical Modelling and Simulation of a Laser-micromachined Vibration-based Micro Power Generator'', International Journal of Nonlinear Sciences and Simulation, Vol. 1, pp. 345-353, 2000.
  • Neil N. H. Ching, Gordon M. H. Chan, Wen J. Li, Hiu Yung Wong, and Philip H. W. Leong, "PCB-integrated Micro-generator Arrays for Wireless Systems", International Symposium on Smart Structures and Microsystems, Oct. 19-21, 2000, Hong Kong.
  • Wen J. Li, Philip H. W. Leong, Terry C. H. Hong, Hiu Yung Wong, and Gordon M. H. Chan, "Infrared Signal Transmission by a Laser-micromachined vibration-induced power generator'', Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems, August 8-11, pp. 236-239, 2000
  • H. Y. Wong, W. S. Yuen, K. H. Lee and P. H. W. Leong, "A Runtime Reconfigurable Implementation of the GSAT Algorithm", the Proceedings of the Ninth International Workshop on Field Programmable Logic and Applications (FPL'99) Glasgow, UK, pp. 526-531, 1999